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AM27C040-120DE Datasheet

  • AM27C040-120DE

  • Advanced Micro Devices [4 Megabit (512 K x 8-Bit) CMOS EPRO...

  • 167.43KB

  • AMD

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FINAL
Am27C040
4 Megabit (512 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
s
Fast access time
鈥?Available in speed options as fast as 90 ns
s
Low power consumption
鈥?<10 碌A(chǔ) typical CMOS standby current
s
JEDEC-approved pinout
鈥?Plug-in upgrade for 1 Mbit and 2 Mbit EPROMs
鈥?Easy upgrade from 28-pin JEDEC EPROMs
s
Single +5 V power supply
s
鹵10%
power supply tolerance standard
s
100% Flashrite鈩?programming
鈥?Typical programming time of 1 minute
s
Latch-up protected to 100 mA from 鈥? V to
V
CC
+ 1 V
s
High noise immunity
s
Compact 32-pin DIP, PDIP, PLCC packages
GENERAL DESCRIPTION
The Am27C040 is a 4 Mbit ultraviolet erasable pro-
grammable read-only memory. It is organized as 512K
bytes, operates from a single +5 V supply, has a static
standby mode, and features fast single address loca-
tion programming. The device is available in windowed
ceramic DIP packages and plastic one-time program-
mable (OTP) packages.
Data can be typically accessed in less than 90 ns, al-
lowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
thus eliminating bus contention in a multiple bus micro-
processor system.
AMD鈥檚 CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 100 mW in active mode,
and 50 碌W in standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD鈥檚
Flashrite programming algorithm (100 碌s pulses) re-
sulting in typical programming time of 1 minute.
BLOCK DIAGRAM
V
CC
V
SS
V
PP
OE#
Output Enable
Chip Enable
and
Prog Logic
Y
Decoder
A0鈥揂18
Address
Inputs
Data Outputs
DQ0鈥揇Q7
Output
Buffers
CE#/PGM#
Y
Gating
X
Decoder
4,194,304-Bit
Cell Matrix
14971G-1
Publication#
14971
Rev:
G
Amendment/0
Issue Date:
May 1998

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