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2SK3067 Datasheet

  • 2SK3067

  • HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS

  • Toshiba

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2SK3067
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺鈭扢OSV)
2SK3067
Chopper Regulator, DC鈭扗C Converter and Motor Drive
Applications
l
Low drain鈭抯ource ON resistance
l
High forward transfer admittance
l
Low leakage current
l
Enhancement鈭抦ode
: R
DS (ON)
= 4.2
鈩?/div>
(typ.)
Unit: mm
: |Y
fs
| =
1.7
S (typ.)
: I
DSS
=
100
碌A(chǔ) (max) (V
DS
= 600 V)
: V
th
= 2.0~4.0 V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Tc = 25擄C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
鹵30
2
5
8
25
93
2
2.5
150
鈭?5~150
Unit
V
V
V
A
A
A
W
mJ
A
mJ
擄C
擄C
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 碌s)
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Electrical Characteristics
(Tc = 25擄C)
Characteristics
Thermal reverse, channel to case
Thermal reverse, channel to ambient
Symbol
R
th (ch鈭抍)
R
th (ch鈭抋)
Max
5.0
62.5
Unit
擄C / W
擄C / W
Note 1: Please use devices on condition that the channel temperature is below 150擄C.
Note 2: V
DD =
90 V, T
ch
= 25擄C (initial), L = 41 mH, R
G
= 25
鈩?
I
AR
= 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-06-05

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