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2SK3061 Datasheet

  • 2SK3061

  • MOS Field Effect Transistor

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3061
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3061
PACKAGE
Isolated TO-220
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 8.5 m鈩?MAX. (V
GS
= 10 V, I
D
= 35 A)
R
DS(on)2
= 12 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 35 A)
鈥?/div>
Low C
iss
: C
iss
= 5200 pF TYP.
鈥?/div>
Built-in gate protection diode
鈥?/div>
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
Note2
Note2
60
鹵20
+20, 鈥?0
鹵70
鹵280
35
2.0
150
鈥?5 to +150
35
122.5
V
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Starting T
ch
= 25 擄C, R
G
= 25
鈩?
V
GS
= 20 V鈫? V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
3.57
62.5
擄C/W
擄C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13100EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
漏
1998,1999

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