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2SK3053 Datasheet

  • 2SK3053

  • MOS Field Effect Transistor

  • 73.83KB

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor
designed for high current switching applications in consumer
instruments.
ORDERING INFORMATION
PART NUMBER
2SK3053
PACKAGE
Isolated TO-220
FEATURES
鈥?/div>
Low On-State Resistance
R
DS(on)1
= 45 m鈩?MAX. (V
GS
= 10 V, I
D
= 13 A)
R
DS(on)2
= 70 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 13 A)
鈥?/div>
Low C
iss
: C
iss
= 790 pF TYP.
鈥?/div>
Built-in Gate Protection Diode
鈥?/div>
Isolated TO-220 package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
Note2
Note2
60
鹵20
+20,
鈭?0
鹵25
鹵75
30
2.0
150
鈥?5 to +150
12.5
15.6
V
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
!
2.
Starting T
ch
= 25 擄C, V
DD
= 30 V
,
R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12912EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
漏
1999, 2000

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