MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
4.6MAX
1.6鹵0.2
Dimensions in mm
1.5鹵0.1
FEATURES
鈥?High power gain:Gpe鈮?3dB
@V
DD
=9.6V,f=450MHz,Pin=17dBm
鈥?High efficiency:55% typ.
鈥?Source case type SOT-89 package
(connected internally to source)
1
2
3
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
1.5
0.53
MAX
0.48MAX
1 : DRAIN
2 : SOURCE
3 : GATE
0.4 +0.03
-0.05
3.0
MARKING
SOT-89
MARKING
TYPE No.
K1
LOT No.
ABSOLUTE MAXIMUM RATINGS
(T
C
=25藲C, unless otherwise noted)
Symbol
V
DSS
V
GSS
P
ch
T
j
T
stg
Parameter
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
Conditions
Ratings
17
鹵10
1.5
150
-40 to +110
Unit
V
V
W
藲C
藲C
Tc=25藲C
(Note2)
Note1: Above parameters are guaranteed independently.
2: Solder on printed board(Copper leaf area;70脳70mm,t=1.6mm Epoxy glass)
ELECTRICAL CHARACTERISTICS
(T
C
=25藲C, unless otherwise noted)
Symbol
I
DSS
I
GSS
V
TH
C
iss
C
oss
P
out
h
D
Parameter
Test conditions
V
DS
=12V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=7V, I
DS
=1mA
V
GS
=10V, V
DS
=0V,f=1MHz
V
DS
=10V, V
GS
=0V,f=1MHz
V
DS
=9.6V, P
in
=50mW,f=450MHz
Min
Limits
Typ
Max
10
1
1.8
Unit
碌A(chǔ)
碌A(chǔ)
V
pF
pF
W
%
Threshold voltage
1.2
10
8
1.2
55
1
45
Note: Above parameters,ratings,limits and conditions are subject to change.
Nov. 麓97
Mitsubishi
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2
3
