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2SK2462 Datasheet

  • 2SK2462

  • MOS Field Effect Transistor

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2462
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 鹵0.3
4.5 鹵0.2
3.2 鹵0.2
2.7 鹵0.2
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)1
= 0.14
鈩?/div>
MAX. (@ V
GS
= 10 V, I
D
= 8.0 A)
15.0 鹵0.3
3 鹵0.1
4 鹵0.2
鈥?/div>
Low C
iss
C
iss
= 790 pF TYP.
鈥?/div>
Built-in G-S Gate Protection Diodes
鈥?/div>
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
100
鹵20
鹵15
鹵60
30
2.0
150
15
22.5
V
V
A
A
W
W
藲C
13.5
MIN.
12.0 鹵0.2
R
DS(on)2
= 0.17
鈩?/div>
MAX. (@ V
GS
= 4 V, I
D
= 8.0 A)
0.7 鹵0.1
2.54
1.3 鹵0.2
1.5 鹵0.2
2.54
0.65 鹵0.1
2.5 鹵0.1
Total Power Dissipation (T
c
= 25 藲C) P
T1
Total Power Dissipation (T
A
= 25 藲C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
T
ch
T
stg
I
AS
E
AS
1. Gate
2. Drain
3. Source
1 2 3
鈥?5 to +150 藲C
A
mJ
MP-45F(ISOLATED TO-220)
Drain
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
漏
1995

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