DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2157
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2157 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V. This product has a low ON resistance and
superb switching characteristics and is ideal for driving the actua-
tors and DC/DC converters.
PACKAGE DIMENSIONS (in mm)
5.7 鹵0.1
2.0 鹵0.2
3.65 鹵0.1
5.4 鹵0.25
1.5 鹵0.1
0.55
FEATURES
鈥?New package intermediate between small-signal and power
models
鈥?Can be directly driven by output of 5-V IC
鈥?Low ON resistance
R
DS(on)
鈮?/div>
0.15
鈩?/div>
@V
GS
= 4 V, I
D
= 2.5 A
R
DS(on)
鈮?/div>
0.10
鈩?/div>
@V
GS
= 10 V, I
D
= 2.5 A
1.0
S
0.5 鹵0.1
D
G
0.5 鹵0.1
2.1 0.85 鹵0.1
4.2
0.41 鹵0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Marking: NA4
Internal diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
鈮?/div>
10 ms,
Duty cycle
鈮?/div>
50 %
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
7.5 cm
2
脳
0.7 mm, ceramic substrate used
2.0
150
鈥?5 to +150
W
藲C
藲C
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
30
鹵20
鹵5.0
鹵10.0
UNIT
V
V
A
A
Document No. D11233EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
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