鈭?/div>
2 Mounted on a 25脳25脳
t
0.8mm Ceramic substrate
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
鈭?/div>
Pulsed
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
30
30
6
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
120
鈭?/div>
320
7
鈭?/div>
鈭?/div>
鈭?/div>
100
100
350
680
鈭?/div>
鈭?/div>
V
V
V
nA
nA
mV
鈭?/div>
pF
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=30V
V
EB
=6V
Conditions
I
C
/I
B
=500mA/25mA
V
CE
/I
C
=2V/100mA
V
CB
=10V,
I
E
=0A,
f=1MHz
鈭?/div>
MHz V
CE
=2V,
I
E
=鈭?00mA,
f=100MHz
next
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