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PRELIMINARY DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5508

NPN SILICON RF TRANSISTOR

FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

鈥?Ideal for low-noise, high-gain amplification applications

鈥?NF = 1.1 dB, G

a

= 16 dB TYP. @f = 2 GHz, V

CE

= 2 V, I

C

= 5 mA

鈥?Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V

CE

= 2 V, I

C

= 20 mA

鈥?f

T

= 25 GHz technology

鈥?Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number

2SC5508

2SC5508-T2

Quantity

Loose product (50 pcs)

Taping product (3 kpcs/reel)

Packaging Style

鈥?8 mm wide emboss taping

鈥?1 pin (emitter), 2 pin (collector) feed hole direction

Remark

To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

tot

Note

Ratings

15

3.3

1.5

35

115

150

鈥?5 to +150

Unit

V

V

V

mA

mW

擄C

擄C

T

j

T

stg

Note

T

A

= +25 擄C (free air)

THERMAL RESISTANCE

Item

Junction to Case Resistance

Junction to Ambient Resistance

Symbol

R

th j-c

R

th j-a

Value

150

650

Unit

擄C/W

擄C/W

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13865EJ1V0DS00 (1st edition)

Date Published March 1999 N CP(K)

Printed in Japan

漏

1999

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