Transistor
2SC2188
Silicon NPN epitaxial planer type
For intermediate frequency amplification of TV image
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
q
q
q
Features
High transition frequency f
T
.
Satisfactory linearity of forward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
1.0鹵0.1
R
0.
0.85
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
45
35
4
50
600
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
(Ta=25藲C)
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Conditions
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 鈥?0mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 100MHz
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 58MHz
18
300
500
1.5
45
35
4
20
50
100
0.5
V
MHz
pF
dB
min
typ
max
10
Unit
碌A(chǔ)
V
V
V
4.1鹵0.2
4.5鹵0.1
7
1
1
2
