| 型號 | 
    簡要描述 | 
    文件大小 | 
    廠家 | 
    下載 | 
  
  
		  
  
    | TIP122 | 
    Mini size of Discrete semiconductor elements | 
    159.76K | 
    ETC [ETC] | 
      | 
	
	   		  
  
    | TIP122 | 
    EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER) | 
    159.76K | 
    KEC [KEC(Korea Electronics)] | 
      | 
	
	   		  
  
    | TIP122 | 
    DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | 
    159.76K | 
    MOTOROLA [Motorola, Inc] | 
      | 
	
	   		  
  
    | TIP122 | 
    COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | 
    159.76K | 
    STMICROELECTRONICS [STMicroelectronics] | 
      | 
	
	   		  
  
    | TIP122 | 
    POWER TRANSISTORS(5.0A,60-100V,65W) | 
    159.76K | 
    MOSPEC [Mospec Semiconductor] | 
      | 
	
	   		  
  
    | TIP122 | 
    Power Darlingtons for Linear and Switching Applications | 
    159.76K | 
    BOCA [Boca Semiconductor Corporation] | 
      | 
	
	   		  
  
    | TIP122 | 
    Plastic Medium-Power | 
    159.76K | 
    MOTOROLA [Motorola, Inc] | 
      | 
	
	   		  
  
    | TIP122 | 
    NPN SILICON POWER DARLINGTONS | 
    159.76K | 
    POINN [Power Innovations Limited] | 
      | 
	
	   		  
  
    | TIP122 | 
    Medium Power Linear Switching Applications | 
    159.76K | 
    FAIRCHILD [Fairchild Semiconductor] | 
      | 
	
	   		  
  
    | TIP122 | 
    Silicon NPN Darlington Power Transistors | 
    127.44K | 
    SAVANTIC [Savantic, Inc.] | 
      | 
	
	   		  
  
    | TIP122 | 
    Silicon NPN Darlington Power Transistors | 
    177.25K | 
    ISC [Inchange Semiconductor Company Limited] | 
      | 
	
	   		  
  
    | TIP122 | 
    TRANS NPN DARL 100V 5A TO-220 | 
    610K | 
     | 
      | 
	
	   		  
  
    | TIP122 | 
    TRANS NPN DARL 100V 5A TO-220 | 
    325K | 
     | 
      | 
	
	   		  
  
    | TIP122 | 
    Dated:21/09/2016  Rev:02 
TOP DYNAMIC 
TIP122 
 
NPN Silicon Power Darlington Transistor  
for power switching and amplifier applications 
 
 
 
 
                                
 
 
Absolute Maximum Ratings (T
a
 = 25 
O
C) 
Parameter Symbol Value Unit 
Collector Base Voltage V
CBO
 
100 V 
Collector Emitter Voltage V
CEO
 
100 V 
Emitter Base Voltage V
EBO
 
5 V 
Collector Current I
C
 
5 A 
Collector Current (Pulse) I
CP
 
8 A 
Base Current I
B
 
0.12 A 
Power Dissipation (T
a
 = 25 
O
C) P
C
 
2 W 
Power Dissipation (T
c
 = 25 
O
C) P
C
 65 W 
Junction Temperature T
j
 150 
O
C 
Storage Temperature Range T
stg
 - 65 to + 150 
O
C 
 
Characteristics at T
a 
= 25 
O
C 
Parameter Symbol Min. Max. Unit 
DC Current Gain 
at V
CE 
= 3 V, I
C 
= 0.5 A 
   at V
CE 
= 3 V, I
C 
= 3 A 
 
h
FE
 
h
FE
 
 
1000 
1000 
 
- 
- 
 
- 
- 
Collector Base Cutoff Current 
at V
CB 
= 100 V 
I
CBO
 - 0.2 mA 
Collector Emitter Cutoff Current 
at V
CE 
= 50 V 
I
CEO
 - 0.5 mA 
Emitter Base Cutoff Current  | 
    225.02K | 
    TD | 
      | 
	
	   		  
  
    | TIP122 | 
    EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER) | 
    226.17K | 
    KEC | 
      | 
	
	   		  
  
    | TIP122 | 
    COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | 
    56.4K | 
    STMICROELECTRONICS | 
      | 
	
	   		  
  
    | TIP122 | 
    POWER TRANSISTORS(5.0A,60-100V,65W) | 
    210.29K | 
    MOSPEC | 
      | 
	
	   		  
  
    | TIP122 | 
    Power Darlingtons for Linear and Switching Applications | 
    31.41K | 
    BOCA | 
      | 
	
	   		  
  
    | TIP122 | 
    NPN SILICON POWER DARLINGTONS | 
    161.12K | 
    POINN | 
      | 
	
	   		  
  
    | TIP122 | 
    Plastic Medium-Power | 
    254.5K | 
    MOTOROLA | 
      |