I - II - III - IV MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
鈩?/div>
10
15
25
50
2
25
25
50
100
5
mA
mA
V/碌s
A/ms
V
D
= 67 %V
DRM
gate open T
j
= 110擄C
T
j
= 110擄C
(dI/dt)c (2) (dV/dt)c = 0.44 A/ms
Table 5: Static Characteristics
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 1.4 A
Test Conditions
t
p
= 380 碌s
T
j
= 25擄C
T
j
= 125擄C
T
j
= 125擄C
T
j
= 25擄C
T
j
= 125擄C
MAX.
MAX.
MAX.
MAX.
0.5
mA
Value
1.56
0.95
400
5
Unit
V
V
m鈩?/div>
碌A(chǔ)
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Table 6: Thermal resistances
Symbol
R
th(j-t)
R
th(j-I)
R
th(j-a)
Junction to tab (AC)
Junction to lead (AC)
Junction to ambient
S = 5 cm
虜
Parameter
SOT-223
TO-92
SOT-223
TO-92
Value
25
擄C/W
60
60
150
擄C/W
Unit
S = Copper surface under tab.
2/8
prev
next