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DDR SDRAM 512Mb B-die (x8)

16M x 8Bit x 4 Banks Double Data Rate SDRAM

DDR SDRAM

9.0 General Description

The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 16,777,216 words by 8bits, fabricated

with SAMSUNG鈥瞫 high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to

400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and

programmable latencies allow the device to be useful for a variety of high performance memory system applications.

10.0 Absolute Maximum Rating

Parameter

Voltage on any pin relative to V

SS

Voltage on V

DD

& V

DDQ

supply relative to V

SS

Storage temperature

Power dissipation

Short circuit current

Symbol

V

IN

, V

OUT

V

DD

, V

DDQ

T

STG

P

D

I

OS

Value

-0.5 ~ 3.6

-1.0 ~ 3.6

-55 ~ +150

1.5

50

Unit

V

V

擄C

W

mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

11.0 DC Operating Conditions

Parameter

Recommended operating conditions(Voltage referenced to V

SS

=0V, T

A

=0 to 70擄C)

Symbol

V

DD

V

DD

V

DDQ

V

DDQ

V

REF

V

TT

V

IH

(DC)

V

IL

(DC)

V

IN

(DC)

V

ID

(DC)

VI(Ratio)

I

I

I

OZ

I

OH

I

OL

I

OH

I

OL

Min

2.3

2.5

2.3

2.5

0.49*VDDQ

V

REF

-0.04

V

REF

+0.15

-0.3

-0.3

0.36

0.71

-2

-5

-16.8

16.8

-9

9

Max

2.7

2.7

2.7

2.7

0.51*VDDQ

V

REF

+0.04

V

DDQ

+0.3

V

REF

-0.15

V

DDQ

+0.3

V

DDQ

+0.6

1.4

2

5

Unit

Note

Supply voltage(for device with a nominal V

DD

of 2.5V for DDR266/333)

Supply voltage(for device with a nominal V

DD

of 2.6V for DDR400)

I/O Supply voltage(for device with a nominal V

DD

of 2.5V for DDR266/333)

I/O Supply voltage(for device with a nominal V

DD

of 2.5V for DDR400)

I/O Reference voltage

I/O Termination voltage(system)

Input logic high voltage

Input logic low voltage

Input Voltage Level, CK and CK inputs

Input Differential Voltage, CK and CK inputs

V-I Matching: Pullup to Pulldown Current Ratio

Input leakage current

Output leakage current

Output High Current(Normal strengh driver) ;V

OUT

= V

TT

+ 0.84V

Output High Current(Normal strengh driver) ;V

OUT

= V

TT

- 0.84V

Output High Current(Half strengh driver) ;V

OUT

= V

TT

+ 0.45V

Output High Current(Half strengh driver) ;V

OUT

= V

TT

- 0.45V

V

V

V

V

V

V

V

-

uA

uA

mA

mA

mA

mA

1

2

3

4

Note :

1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may

not exceed +/-2% of the dc value.

2. V

TT

is not applied directly to the device. V

TT

is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track vari-

ations in the DC level of VREF

3. VID is the magnitude of the difference between the input level on CK and the input level on CK.

4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,

for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers

due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to

source voltages from 0.1 to 1.0.

Rev. 1.3 June. 2005

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