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K4D263238G-VC Datasheet

  • K4D263238G-VC

  • 128Mbit GDDR SDRAM

  • 20頁

  • SAMSUNG   SAMSUNG

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K4D263238G-GC
Revision History
Revision 1.8 (March 5, 2005)
鈥?Remove 80% and 120% of the IBIS(I - V) curve in the data sheet
128M GDDR SDRAM
Revision 1.7 (February 5, 2005)
鈥?Changed EMRS table for Driver Impedance control .
鈥?Added IBIS (I - V) curve in the data sheet
Revision 1.6 (January 5, 2005)
鈥?Added 200MHz/ 166MHz AC characteristics in AC CHARACTERISTICS (II) table of K4D263238G-VC2A and
K4D263238G-VC33.
鈥?Typo corrected
Revision 1.5 (December 29, 2004)
鈥?Added tCK(min)=5ns @ CL3
鈥?Changed tCK(max) of K4D263238G-GC2A from 4ns to 10ns
Revision 1.4 (November 30, 2004)
鈥?Typo Corrected in DC table
Revision 1.3 (November 12, 2004)
鈥?Changed AC spec format
鈥?Changed DC spec measurement condition from VDD(typ) to VDD(max)
Revision 1.2 (October 18, 2004)
鈥?Changed unit of tWR and tWR_A from ns to tCK to avoid misuse.
鈥?Added lower speed timing set
Revision 1.1 (August 31, 2004)
鈥?Added 100% driver strength option as A6A1="11"
Revision 1.0 (July 12, 2004)
鈥?Defined DC spec
Revision 0.4 (June 20, 2004)
鈥?Removed K4D26323QG-GC40/45 from the spec
鈥?Added dummy cycle (20tCK) between EMRS and MRS during the power-up sequence.
Revision 0.3 (June 8, 2004)
鈥?Internal only
Revision 0.2 (April 22, 2004)
鈥?Changed CAS latency of K4D263238G-GC2A from 4tCK to 5tCK
鈥?Changed tWR & tWR_A of K4D263238G-GC2A from 4tCK to 5tCK
- 2 -
Rev 1.8 (March. 2005)

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