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K4M51163LE-YPL Datasheet

  • K4M51163LE-YPL

  • 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

  • 12頁(yè)

  • SAMSUNG   SAMSUNG

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K4M51163LE - Y(P)C/L/F
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
ss
Voltage on V
DD
supply relative to V
ss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
Mobile-SDRAM
Unit
V
V
擄C
W
mA
-55 ~ +150
1.0
50
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 70擄C)
Parameter
Symbol
V
DD
Supply voltage
V
DDQ
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
V
IH
V
IL
V
OH
V
OL
I
LI
Min
2.3
2.3
1.65
0.8 x V
DDQ
-0.3
V
DDQ
-0.2
-
-10
Typ
2.5
2.5
-
-
0
-
-
-
Max
2.7
2.7
2.7
V
DDQ
+ 0.3
0.3
-
0.2
10
Unit
V
V
V
V
V
V
V
uA
1
2
3
I
OH
= -0.1mA
I
OL
= 0.1mA
4
Note
NOTES :
1. Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products.
Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).
2. VIH (max) = 3.0V AC.The overshoot voltage duration is
鈮?/div>
3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is
鈮?/div>
3ns.
4. Any input 0V
鈮?/div>
VIN
鈮?/div>
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V
鈮?/div>
VOUT
鈮?/div>
VDDQ.
CAPACITANCE
(V
DD
= 2.5V,
Pin
Clock
RAS, CAS, WE, CS, CKE
DQM
Address
DQ
0
~ DQ
15
T
A
= 23擄C, f = 1MHz, V
REF
=0.9V
鹵
50 mV)
Symbol
C
CLK
C
IN
C
IN
C
ADD
C
OUT
Min
3.0
3.0
1.5
3.0
3.0
Max
12.0
12.0
6.0
12.0
6.5
Unit
pF
pF
pF
pF
pF
Note
February 2004

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