K4M511533E - Y(P)C/L/F
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
ss
Voltage on V
DD
supply relative to V
ss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
Mobile-SDRAM
Unit
V
V
擄C
W
mA
-55 ~ +150
1.0
50
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25擄C ~ 70擄C)
Parameter
Supply voltage
V
DDQ
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
V
IH
V
IL
V
OH
V
OL
I
LI
2.7
2.2
-0.3
2.4
-
-10
3.0
3.0
0
-
-
-
3.6
V
DDQ
+ 0.3
0.5
-
0.4
10
V
V
V
V
V
uA
1
2
I
OH
= -2mA
I
OL
= 2mA
3
Symbol
V
DD
Min
2.7
Typ
3.0
Max
3.6
Unit
V
Note
NOTES :
1. VIH (max) = 5.3V AC.The overshoot voltage duration is
鈮?/div>
3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
鈮?/div>
3ns.
3. Any input 0V
鈮?/div>
VIN
鈮?/div>
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V
鈮?/div>
VOUT
鈮?/div>
VDDQ.
CAPACITANCE
(V
DD
= 3.0V & 3.3V,
Pin
Clock
RAS, CAS, WE, CKE
CS
DQM
Address
DQ
0
~ DQ
15
T
A
= 23擄C, f = 1MHz, V
REF
=0.9V
鹵
50 mV)
Symbol
C
CLK
C
IN
C
IN
C
IN
C
ADD
C
OUT
Min
3.0
3.0
1.5
3.0
3.0
6.0
Max
12.0
12.0
6.0
12.0
12.0
13.0
Unit
pF
pF
pF
pF
pF
pF
Note
February 2004
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