L-51ROPT1XX
5.0mm PHOTOTRANSISTOR
ABSOLUTE MAXIMUN RATING:(Ta=25潞C)
Part No.
P
D
(mw)
V
(BR)R
(V)
Topr
Tstg
L-51ROPT1XX
PARAMETER
10
Power Dissipation
5
Reverse break down
voltage
-35潞C to 85潞C
Operating Temperature
Range
5潞C For 3 Seconds
-35潞C to 85潞C
Storage Temperature
Range
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250潞C
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25潞C)
(nm)
t
R
/t
F
(uS)
C
CB
(pF)
l
C
(mA)
V
CE(s)
(V)
I
CEO
(nA)
BV
CEO
(V)
BV
ECO
(V)
Part No.
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN PEAK MAX
L-51ROPT1C 30
L-51ROPT1D1 30
L-51ROPT1D2 30
5
5
5
100
100
100
0.4
0.4
0.4
15/15
15/15
15/15
1.8 2.4
1.7 2.2
1.7 2.2
6.4
6.4
6.4
400
900 940
800 870
1050
TEST
CONDITION
PARAMETER
I
C
=100uA
Ee=0mW/cm
2
I
E
=100
uA
Ee=0mW/cm
2
V
E
=20V
Ee=0mW/cm
2
COLLECTOR
DARK
CURRENT
I
C
=2mA
Ee=0.5mW/cm
2
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
V
CE
=5V
I
C
=1mA
RL=1000
RISE/FALL
TIME
V
CE
=5V
Ee=0.1mW/cm
2
ON STATE
COLLECTOR
CURRENT
f=
1MHZ
V
CB
=3V
Ee=0mW/cm
2
COLLECTOR
-BASE
CAPACITANCE
SPECTRAL
SENSITIVITY
WAVELENGTH
EMITTER-
COLLECTOR-
EMITTER
COLLECTOR
BREAKDOWN BREAKDOWN
VOLTAGE
VOLTAGE
D1,D2=BLACK
1.All dimension are in millimeters (inches).
0.25 mm (0.01") unless otherwise specified.
2.Tolerance is
B-8