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K4H1G0838M-TCA0 Datasheet

  • K4H1G0838M-TCA0

  • 128Mb DDR SDRAM

  • 53頁

  • SAMSUNG   SAMSUNG

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128Mb DDR SDRAM
11.2 Half strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
90
80
70
60
Maximum
Iout(mA)
Typical High
Typical Low
Minimum
40
30
20
10
Iout(mA)
0
0.0
1.0
2.0
50
Vout(V)
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.
0.0
0
0.5
1.0
1.5
2.0
2.5
-10
-20
Iout(mA)
-30
-40
-50
-60
Minumum
Typical Low
Typical High
-70
-80
-90
Maximum
Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity 鹵10%, for device drain to source voltages
from 0 to VDDQ/2
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
- 49 -
REV. 1.0 November. 2. 2000

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