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K4H1G0438M-TCA0 Datasheet

  • K4H1G0438M-TCA0

  • 128Mb DDR SDRAM

  • 53頁(yè)

  • SAMSUNG   SAMSUNG

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128Mb DDR SDRAM
11. IBIS: I/V Characteristics for Input and Output Buffers
11.1 Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
160
Maximum
140
120
Typical High
Iout(mA)
100
80
60
Typical Low
Minimum
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.
0.0
0
-20
-40
0.5
1.0
1.5
2.0
2.5
Minumum
Typical Low
Iout(mA)
-60
-80
-100
-120
-140
-160
-180
-200
-220
Typical High
Maximum
Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity 鹵10%, for device drain to source voltages
from 0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
- 47 -
REV. 1.0 November. 2. 2000

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