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K4H280438M-TCA0 Datasheet

  • K4H280438M-TCA0

  • 128Mb DDR SDRAM

  • 53頁

  • SAMSUNG   SAMSUNG

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128Mb DDR SDRAM
Revision History(continued)
Version 0.7 (March, 2000)
- Changed 128Mb spec from target to Preliminary version.
- Changed partnames as follows.
from
KM44L32031BT-G(L)Z/Y/0
KM48L16031BT-G(L)Z/Y/0
KM416L8031BT-G(L)Z/Y/0
- Changed input cap. spec.
from
CK/CK
DQ/DQS/DM
CMD/Addr
2.5pF ~ 3.5pF
4.0pF ~ 5.5pF
2.5pF ~ 3.5pF
to
2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF
4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF
2.0pF ~ 3.0pF with Delta Cin = 0.5pF
to
K4H280438B-TC(L)A2/B0/A0
K4H280838B-TC(L)A2/B0/A0
K4H281638B-TC(L)A2/B0/A0
- Changed operating condition.
from
Vil/Vih(ac)
V
IL
/V
IH
(dc)
Vref +/- 0.35V
Vref +/- 0.18V
to
Vref +/- 0.31V
Vref +/- 0.15V
- Added Overshoot/Undershoot spec
. Vih(max) = 4.2V, the overshoot voltage duration is
鈮?/div>
3ns at VDD.
. Vil(min) =- 1.5V, the overshoot voltage duration is
鈮?/div>
3ns at VSS.
- Changed AC parameters as follows.
from
tDQSQ
tDV
tQH
tHP
- Added DC spec values.
+/- 0.5(PC266), +/- 0.6(PC200)
+/- 0.35tCK
-
-
to
+0.5(PC266), +0.6(PC200)
-
tHPmin - 0.75ns(PC266)
tHPmin - 1.0ns(PC200)
tCLmin or tCHmin
New Definition
Removed
New Definition
Comments
Version 0.71 (April, 2000)
- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.
- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.
Version 0.72(May,2000)
-
Changed DC spec item & test condition
Version 0.73(June,2000)
-
Added updated DC spec values
-
Deleted tDAL in AC parameter
Version 1.0(November,2000)
-
Eliminate "preliminary"
- 3 -
REV. 1.0 November. 2. 2000

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