K4D263238M
AC CHARACTERISTICS (I)
Parameter
Row cycle time
Refresh row cycle time
128M DDR SDRAM
-45*
Min
13
15
9
4
2
4
2
2
2
1
2
6
200
1tCK+tIS
Symbol
-50
Max
-
-
100K
-55
Max
-
-
100K
-60
Max
-
-
100K
Min
12
14
8
4
2
4
2
2
2
1
2
6
200
1tCK+tIS
Min
12
14
8
4
2
4
2
2
2
1
2
6
200
1tCK+tIS
Min
10
12
7
3
2
3
2
2
2
1
2
5
200
1tCK+tIS
Max
-
-
100K
Unit
Note
t
RC
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
t
RFC
Row active time
t
RAS
RAS to CAS delay for Read
t
RCDRD
RAS to CAS delay for Write
t
RCDWR
Row precharge time
t
RP
Row active to Row active
t
RRD
Last data in to Row precharge
t
WR
Last data in to Read com-
mand
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
Power down exit time
Refresh interval time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
t
CDLR
t
CCD
t
MRD
t
DAL
t
XSR
t
PDEX
t
REF
7.8
7.8
7.8
7.8
Note :1 For normal write operation, even numbers of Din are to be written inside DRAM
- 16 -
Rev. 1.3 (Aug. 2001)