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K4D263238A-GC50 Datasheet

  • K4D263238A-GC50

  • 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with ...

  • 17頁

  • SAMSUNG   SAMSUNG

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K4D263238A-GC
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
C)
128M DDR SDRAM
DC CHARACTERISTICS
Parameter
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Symbol
Version
Test Condition
-33
I
CC1
I
CC2
P
Burst Lenth=2
t
RC
鈮?/div>
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
CKE
鈮?/div>
V
IL
(max),
t
CC
=
t
CC
(min)
CKE
鈮?/div>
V
IH
(min), CS
鈮?/div>
V
IH
(min),
430
75
120
120
310
740
300
-36
410
70
115
110
280
690
290
-40
380
65
110
100
240
640
280
4
960
900
830
750
690
-45
370
65
100
100
230
610
270
-50
350
65
100
100
230
570
260
mA
mA
mA
mA
mA
mA
mA
mA
mA
2
1
Unit Note
Precharge Standby Current
I
CC2
N
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Operating Current
( Burst Mode)
Refresh Current
Self Refresh Current
Operating Current
(4Bank interleaving)
I
CC3
P
I
CC3
N
I
CC4
I
CC5
I
CC6
I
CC7
t
CC
=
t
CC
(min)
CKE
鈮?/div>
V
IL
(max),
t
CC
=
t
CC
(min)
CKE
鈮?/div>
VIH(min), CS
鈮?/div>
VIH(min),
t
CC
=
t
CC
(min)
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
t
RC
鈮?/div>
t
RFC
(min)
CKE
鈮?/div>
0.2V
Burst Length=4
t
RC
鈮?/div>
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
Note :
1. Measured with outputs open.
2. Refresh period is 32ms.
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, V
DD
=2.5V+ 5%, V
DDQ
=2.5V+ 5%,T
A
=0 to 65擄C)
Parameter
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
Symbol
V
IH
V
IL
V
ID
V
IX
Min
V
REF
+0.35
-
0.7
0.5*V
DDQ
-0.2
Typ
-
-
-
-
Max
-
V
REF
-0.35
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Unit
V
V
V
V
Note
1
2
Note :
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
- 11 -
Rev. 2.0 (Jan. 2003)

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