BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS 鈭?BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25擄C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
(Devices listed in
bold, italic
are ON Semiconductor Preferred devices.)
V
Z1
(Volts)
@ I
ZT1
= 5 mA
(Note 3)
Device
Marking
Z11
Z12
Z13
Z14
Z15
Z16
W9
V
Z2
(V)
@ I
ZT2
= 1 mA
(Note 3)
V
Z3
(V)
@ I
ZT3
= 20 mA
(Note 3)
Max Reverse
Leakage
Current
I
R
mA
50
20
10
5
5
3
3
V
R
@
Volts
1
1
1
1
1
1
1
q
VZ
(mV/k)
@ I
ZT1
= 5 mA
Min
鈭?.5
鈭?.5
鈭?.5
鈭?.5
鈭?.5
鈭?.5
鈭?.5
Max
0
0
0
0
0
鈭?.5
0
Device
BZX84C2V4LT1, G*
BZX84C2V7LT1, G*
BZX84C3V0LT1
BZX84C3V3LT1, G*
BZX84C3V6LT1, G*
BZX84C3V9LT1, G*
BZX84C4V3LT1, G*
Min
2.2
2.5
2.8
3.1
3.4
3.7
4
Nom
2.4
2.7
3
3.3
3.6
3.9
4.3
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
Z
ZT1
(W)
@ I
ZT1
=
5 mA
100
100
95
95
90
90
90
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
Z
ZT2
(W)
@ I
ZT2
=
1 mA
600
600
600
600
600
600
600
Min
2.6
3
3.3
3.6
3.9
4.1
4.4
Max
3.2
3.6
3.9
4.2
4.5
4.7
5.1
Z
ZT3
(W)
@ I
ZT3
=
20 mA
50
50
50
40
40
30
30
C (pF)
@ V
R
= 0
f = 1 MHz
450
450
450
450
450
450
450
BZX84C4V7LT1
BZX84C5V1LT1
BZX84C5V6LT1
BZX84C6V2LT1
BZX84C6V8LT1
BZX84C7V5LT1
BZX84C8V2LT1
BZX84C9V1LT1
BZX84C10LT1, G*
BZX84C11LT1, G*
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
80
60
40
10
15
15
15
15
20
20
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
4.7
5.3
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
500
480
400
150
80
80
80
100
150
150
4.5
5
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
5.4
5.9
6.3
6.8
7.4
8
8.8
9.7
10.7
11.8
15
15
10
6
6
6
6
8
10
10
3
2
1
3
2
1
0.7
0.5
0.2
0.1
2
2
2
4
4
5
5
6
7
8
鈭?.5
鈭?.7
鈭?.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
260
225
200
185
155
140
135
130
130
130
BZX84C12LT1, G*
BZX84C13LT1, G*
BZX84C15LT1
BZX84C16LT1, G*
Y2
Y3
Y4
Y5
11.4
12.4
14.3
15.3
12
13
15
16
12.7
14.1
15.8
17.1
25
30
30
40
11.2
12.3
13.7
15.2
12.7
14
15.5
17
150
170
200
200
11.4
12.5
13.9
15.4
12.9
14.2
15.7
17.2
10
15
20
20
0.1
0.1
0.05
0.05
8
8
10.5
11.2
6.0
7.0
9.2
10.4
10.0
11.0
13.0
14.0
130
120
110
105
BZX84C18LT1
BZX84C20LT1, G*
BZX84C22LT1, G*
BZX84C24LT1
Y6
Y7
Y8
Y9
16.8
18.8
20.8
22.8
18
20
22
24
19.1
21.2
23.3
25.6
45
55
55
70
16.7
18.7
20.7
22.7
19
21.1
23.2
25.5
225
225
250
250
16.9
18.9
20.9
22.9
19.2
21.4
23.4
25.7
20
20
25
25
0.05
0.05
0.05
0.05
12.6
14
15.4
16.8
12.4
14.4
16.4
18.4
16.0
18.0
20.0
22.0
100
85
85
80
V
Z1
Below
@ I
ZT1
= 2 mA
Device
Marking
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
Min
25.1
28
31
34
37
40
44
48
52
58
64
70
Nom
27
30
33
36
39
43
47
51
56
62
68
75
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Device
BZX84C27LT1, G*
BZX84C30LT1
BZX84C33LT1, G*
BZX84C36LT1
BZX84C39LT1, G*
BZX84C43LT1, G*
BZX84C47LT1, G*
BZX84C51LT1
BZX84C56LT1, G*
BZX84C62LT1
BZX84C68LT1, G*
BZX84C75LT1, G*
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
80
80
90
130
150
170
180
200
215
240
255
V
Z2
Below
@ I
ZT2
= 0.1 m
A
Min
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
V
Z3
Below
@ I
ZT3
= 10 mA
Min
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
73.2
80.2
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
50
55
60
70
80
90
100
110
120
130
140
Max Reverse
Leakage
Current
I
R
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
@
V
R
(V)
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
q
VZ
(mV/k) Below
@ I
ZT1
= 2 mA
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
C (pF)
@ V
R
= 0
f = 1 MHz
70
70
70
70
45
40
40
40
40
35
35
35
3. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25擄C.
* The 鈥淕鈥?suffix indicates Pb鈭扚ree package available.
http://onsemi.com
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