BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25擄C
unless otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
R
V
R
I
F
V
F
QV
Z
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
Max. Capacitance @ V
R
= 0 and f = 1 MHz
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25擄C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
(Devices listed in
bold, italic
are ON Semiconductor Preferred devices.)
V
Z1
(V)
@ I
ZT1
= 5 mA
(Note 4)
Device
BZX84C3V3ET1
Device
Mark-
ing
BA4
Min
3.1
Nom
3.3
Max
3.5
V
Z2
(V)
@ I
ZT2
= 1 mA
(Note 4)
Min
2.3
Max
2.9
V
Z3
(V)
@ I
ZT3
=20 mA
(Note 4)
Min
3.6
Max
4.2
Max
Reverse
Leakage
Current
V
I
R
@
R
mA
(V)
5
1
q
VZ
C (pF)
(mV/k)
@
@ I
ZT1
=5 mA
V
R
= 0
f=
Min Max 1 MHz
鈭?.5
0
450
Z
ZT1
(W)
@ I
ZT1
=
5 mA
95
Z
ZT2
(W)
@ I
ZT2
=
1 mA
600
Z
ZT3
(W)
@
I
ZT3
=
20 mA
40
BZX84C4V7ET1
BZX84C5V1ET1
BZX84C5V6ET1
BZX84C6V2ET1, G*
BZX84C6V8ET1
BZX84C7V5ET1
BZX84C10ET1
BA9
BB1
BB2
BB3
BB4
BB5
BB8
4.4
4.8
5.2
5.8
6.4
7
9.4
4.7
5.1
5.6
6.2
6.8
7.5
10
5
5.4
6
6.6
7.2
7.9
10.6
80
60
40
10
15
15
20
3.7
4.2
4.8
5.6
6.3
6.9
9.3
4.7
5.3
6
6.6
7.2
7.9
10.6
500
480
400
150
80
80
150
4.5
5
5.2
5.8
6.4
7
9.4
5.4
5.9
6.3
6.8
7.4
8
10.7
15
15
10
6
6
6
10
3
2
1
3
2
1
0.2
2
2
2
4
4
5
7
鈭?.5
鈭?.7
鈭?.0
0.4
1.2
2.5
4.5
0.2
1.2
2.5
3.7
4.5
5.3
8.0
260
225
200
185
155
140
130
BZX84C12ET1
BZX84C15ET1
BZX84C16ET1
BC1
BC3
BC4
11.4
14.3
15.3
12
15
16
12.7
15.8
17.1
25
30
40
11.2
13.7
15.2
12.7
15.5
17
150
200
200
11.4
13.9
15.4
12.9
15.7
17.2
10
20
20
0.1
0.05
0.05
8
10.5
11.2
6.0
9.2
10.4
10.0
13.0
14.0
130
110
105
BZX84C18ET1
BZX84C24ET1
BC5
BC8
16.8
22.8
18
24
19.1
25.6
45
70
16.7
22.7
19
25.5
225
250
16.9
22.9
19.2
25.7
20
25
0.05
0.05
12.6
16.8
12.4
18.4
16.0
22.0
100
80
Device
BZX84C27ET1
BZX84C43ET1
Device
Mark-
ing
BC9
BK6
V
Z1
Below
@ I
ZT1
= 2 mA
Min
25.1
40
Nom
27
43
Max
28.9
46
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
150
V
Z2
Below
@ I
ZT2
=
0.1 mA
Min
25
39.7
Max
28.9
46
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
300
375
V
Z3
Below
@ I
ZT3
= 10 m
A
Min
25.2
40.1
Max
29.3
46.5
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
80
Max
Reverse
Leakage
Current
V
I
R
@
R
mA
(V)
0.05
0.05
18.9
30.1
q
VZ
(mV/k) Be-
low
@ I
ZT1
= 2
mA
Min
21.4
37.6
Max
25.3
46.6
C (pF)
@ V
R
=0
f=
1 MHz
70
40
* The 鈥淕鈥?suffix indicates Pb鈭扚ree package available.
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25擄C
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