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K4H1G0638C-UC/LB0 Datasheet

  • K4H1G0638C-UC/LB0

  • Stacked 1Gb C-die DDR SDRAM Specification

  • 23頁(yè)

  • SAMSUNG   SAMSUNG

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DDR SDRAM stacked 1Gb C-die (x4/x8)
16.0 AC Operating Conditions
Parameter/Condition
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
0.7
0.5*VDDQ-0.2
Min
VREF + 0.31
VREF - 0.31
VDDQ+0.6
Max
DDR SDRAM
Unit
V
V
V
V
1
2
Note
0.5*VDDQ+0.2
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Specification
DDR400
TBD
TBD
TBD
TBD
DDR333
TBD
TBD
TBD
TBD
DDR200/266
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
VDD
5
4
3
2
Volts (V)
1
0
-1
-2
-3
-4
-5
0
Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
GND
0.6875
1.5
2.5
3.5
4.5
5.5
6.3125
7.0
0.5
1.0
2.0
3.0
4.0
5.0
6.0
6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
Rev. 1.1 June. 2005

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