Multiport MicroCapacitance (MC) SIDACtor Device
Thermal Considerations
Package
Modified MS-013
6
5
4
1
2
3
Symbol
T
J
T
S
R
胃JA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
60
Unit
擄C
擄C
擄C/W
+I
+I
I
PP
鈥?Peak Pulse Current 鈥?%I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
I
T
I
T
I
S
S
I
H
I
DRM
-V
-V
V
T
V
T
V
DRM
V
DRM
V
S
V
S
100
Peak
Value
Waveform = t
r
x t
d
+V
+V
50
Half Value
0
0
t
r
t
d
t 鈥?Time (碌s)
-I
-I
V-I Characteristics
t
r
x t
d
Pulse Wave-form
14
Percent of V
S
Change 鈥?%
10
I
H
(T
C
= 25 藲C)
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 藲C
25 藲C
Ratio of
Case Temperature (T
C
) 鈥?藲C
Junction Temperature (T
J
) 鈥?藲C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
漏 2004 Littelfuse, Inc.
SIDACtor
廬
Data Book and Design Guide
2 - 25
http://www.littelfuse.com
+1 972-580-7777
Data Sheets