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K4H560438E-VC/LB3 Datasheet

  • K4H560438E-VC/LB3

  • 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free...

  • 23頁

  • SAMSUNG   SAMSUNG

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DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM Spec Items & Test Conditions
Conditions
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
Operating current - One bank operation ;
One bank open, BL=4, Reads
- Refer to the following page for detailed test condition
DDR SDRAM
Symbol
IDD0
IDD1
IDD2P
IDD2F
Percharge power-down standby current;
All banks idle; power - down mode;
CKE = <VIL(max); tCK=10ns for DDR200,7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM.
Precharge Floating standby current;
CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=10ns for DDR200,
7.5ns for DDR266, 6ns for DDR333; Address and other control inputs changing once per clock cycle;
Vin = Vref for DQ,DQS and DM
Precharge Quiet standby current;
CS# > = VIH(min); All banks idle;
CKE > = VIH(min); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Address and other control inputs
stable at >= VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM
Active power - down standby current ;
one bank active; power-down mode;
CKE=< VIL (max); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM
Active standby current;
CS# >= VIH(min); CKE>=VIH(min);
one bank active; active - precharge; tRC=tRASmax; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333;
DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock
cycle
Operating current - burst read;
Burst length = 2; reads; continguous burst; One bank active; address and control
inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266(A2), CL=2.5 at
7.5ns for DDR266(B0), 6ns for DDR333; 50% of data changing on every transfer; lout = 0 m A
Operating current - burst write;
Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2 at tCK= 10ns for DDR200, CL=2
at tCK=7.5ns for DDR266(A2), CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333; DQ, DM and DQS inputs
changing twice per clock cycle, 50% of input data changing at every burst
Auto refresh current;
tRC = tRFC(min) - 8*tCK for DDR200 at tCK=10ns; 10*tCK for DDR266 at tCK=7.5ns;
12*tCK for DDR333 at tCK=6ns; distributed refresh
Self refresh current;
CKE =< 0.2V; External clock on; tCK = 10ns for DDR200, tCK=7.5ns for DDR266, 6ns for
DDR333.
Orerating current - Four bank operation ;
Four bank interleaving with BL=4
-Refer to the following page for detailed test condition
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7A
Input/Output Capacitance
Parameter
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM for x4/8)
(V
DD
=2.5, V
DDQ
=2.5V, T
A
= 25擄C, f=1MHz)
Symbol
CIN1
CIN2
COUT
CIN3
Min
2
2
4
4
Max
3
3
5
5
Delta
0.5
0.25
0.5
Unit
pF
pF
pF
pF
Note
4
4
1,2,3,4
1,2,3,4
Note :
1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V, f=100MHz, tA=25擄C, Vout(dc) =
VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading
(to facilitate trace matching at the board level).
Rev. 1.1 October, 2004

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