最新免费av在线观看,亚洲综合一区成人在线,中文字幕精品无码一区二区三区,中文人妻av高清一区二区,中文字幕乱偷无码av先锋

K4E661612C-60 Datasheet

  • K4E661612C-60

  • 4M x 16bit CMOS Dynamic RAM with Extended Data Out

  • 885.66KB

  • 36頁

  • SAMSUNG   SAMSUNG

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

K4E661612C,K4E641612C
16.
t
CWL
is specified from W falling edge to the earlier CAS rising edge.
17.
t
CSR
is referenced to earlier CAS falling before RAS transition low.
18.
t
CHR
is referenced to the later CAS rising high after RAS transition low.
CMOS DRAM
RAS
LCAS
UCAS
t
CSR
t
CHR
19.
t
DS
is specified for the earlier CAS falling edge and
t
DH
is specified by the later CAS falling edge in early write cycle.
LCAS
UCAS
t
DS
DQ0 ~ DQ15
Din
t
DH
20. If RAS goes high before CAS high going, the open circuit condition of the output is achieved by CAS high going.
21.
t
ASC
鈮?ns,
Assume t
T
=2.0ns, if t
ASC
鈮?ns,
then t
HPC
(min) and t
CAS
(min) must be increased by the value of "6ns-t
ASC
".
22. If
t
RASS
鈮?00us,
then RAS precharge time must use
t
RPS
instead of
t
RP
.
23. For RAS-only-Refresh and Burst CAS-before-RAS refresh mode, 4096 cycles(4K/8K) of burst refresh must be executed within
64ms before and after self refresh, in order to meet refresh specification.
24. For distributed CAS-before-RAS with 15.6us interval, CBR refresh should be executed with in 15.6us immediately before and
after self refresh in order to meet refresh specification.

K4E661612C-60相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋
返回頂部

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！