K4D553238F-JC
AC CHARACTERISTICS (I)
Parameter
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery +
Precharge
Exit self refresh to read command
Power down exit time
Refresh interval time
256M GDDR SDRAM
Sym-
bol
-2A
Min
16
17
11
5
3
5
3
4
4
3
1
2
9
200
3tCK
+tIS
-33
Max
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-36
Max
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-40
Max
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
Min
16
17
11
5
3
5
3
4
4
3
1
2
9
200
3tCK
+tIS
Min
16
17
11
4
2
5
3
4
4
2
1
2
9
200
3tCK
+tIS
Min
13
15
9
4
2
4
3
3
3
2
1
2
7
200
3tCK
+tIS
Max
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-50
Unit Note
Min
Max
12
14
8
4
2
4
3
3
3
2
1
2
7
200
3tCK
+tIS
t
RC
t
RFC
t
RAS
t
RCDRD
t
RCDW
t
RP
t
RRD
t
WR
t
WR_A
t
CDLR
t
CCD
t
MRD
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
1
1
1
t
DAL
t
XSR
t
PDEX
t
REF
7.8
-
7.8
-
7.8
-
7.8
-
7.8
-
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
(Unit : Number of Clock)
AC CHARACTERISTICS (II)
K4D553238F-JC2A
Frequency
Cas Latency
350MHz ( 2.86ns )
4
300MHz ( 3.3ns )
4
275MHz ( 3.6ns )
4
250MHz ( 4.0ns )
3
200MHz ( 5.0ns )
3
tRC
16
16
16
13
12
tRFC
17
17
17
15
14
tRAS
11
11
11
9
8
tRCDRD tRCDWR
5
3
5
3
4
2
4
2
4
2
tRP
5
5
5
4
4
tRRD
3
3
3
3
3
(Unit : Number of Clock)
tDAL
9
9
9
7
7
Unit
tCK
tCK
tCK
tCK
tCK
K4D553238F-JC33
Frequency
Cas Latency
300MHz ( 3.3ns )
4
275MHz ( 3.6ns )
4
250MHz ( 4.0ns )
3
200MHz ( 5.0ns )
3
tRC
16
16
13
12
tRFC
17
17
15
14
tRAS
11
11
9
8
tRCDRD tRCDWR
5
3
4
2
4
2
4
2
tRP
5
5
4
4
tRRD
3
3
3
3
tDAL
9
9
7
7
Unit
tCK
tCK
tCK
tCK
- 15 -
Rev 1.0 (Mar. 2004)