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200GB120DN2 Datasheet

  • 200GB120DN2

  • IGBT Module

  • 10頁

  • ETC

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BSM 200 GB 120 DN2
Electrical Characteristics,
at T
j
= 25 擄C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 擄C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
鈩?/div>
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
鈩?/div>
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
鈩?/div>
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
鈩?/div>
Free-Wheel Diode
Diode forward voltage
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 25 擄C
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 125 擄C
Reverse recovery time
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2000 A/碌s,
T
j
= 125 擄C
Reverse recovery charge
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2000 A/碌s
T
j
= 25 擄C
T
j
= 125 擄C
-
-
12
36
-
-
Q
rr
-
0.5
-
碌C
t
rr
V
F
-
-
2
1.8
2.5
-
碌s
V
-
80
120
t
f
-
550
800
t
d(off)
-
80
160
t
r
-
110
220
t
d(on)
ns
Values
typ.
max.
Unit
3
Oct-21-1997

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