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M93C56-WMN6 Datasheet

  • M93C56-WMN6

  • Electronic Component

  • 31頁(yè)

  • STMicroelectronics   STMicroelectronics

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Revision history
Table 34.
Date
M93C86, M93C76, M93C66, M93C56, M93C46
Document revision history (continued)
Revision
Changes
Document reformatted. TSSOP8 3 脳 3 mm (DS) package removed.
Erase/Write Enable (EWEN) instruction replaced by Write Enable
(WEN). Erase/Write Disable (EWDS) instruction replaced by Write
Disable (WDS).
Section 7: Initial delivery state
modified, ACTIVE POWER AND
STANDBY POWER MODES section removed.
I
CC1
test conditions modified in
Table 15, Table 16, Table 17, Table 18
and
Table 19.
Note 1 added to
Table 15.
t
W
parameter description modified in
Table 20, Table 21, Table 22
and
Table 23..
SO8 narrow and UFDFPN8 package specifications updated (see
Section 12: Package mechanical data).
Table 29, Table 30, Table 31, Table 32
and
Table 33
added.
Blank option removed under Plating technology in
Table 27: TSSOP8 鈥?/span>
8 lead thin shrink small outline, package mechanical data.
Section 2: Connecting to the serial bus
added. Device grade 7 removed.
Small text changes.
M93C76-R root part number added.
Section 2: Connecting to the serial bus
modified (pull-down resitor
added to
Figure 3: Bus master and memory devices on the serial bus
and paragraph added).
Section 3.1.2: Power-up conditions
corrected.
T
LEAD
modified in
Table 8: Absolute maximum ratings.
V
OH
min guaranteed at a higher value in DC characteristics tables
15,
16, 17
and
18.
M93C56-R is also offered in TSSOP8 package (see
Table 30).
Package mechanical inch values calculated from mm and rounded to 4
decimal digits in
Section 12: Package mechanical data
TSSOP8 (DW) package specifications updated.
31-Jul-2007
7
29-Jan-2007
8
36/37

M93C56-WMN6 產(chǎn)品屬性

  • STMicroelectronics

  • 電可擦除可編程只讀存儲(chǔ)器

  • 2 Kbit

  • 256 x 8, 128 x 16

  • 40 yr

  • 2 MHz

  • 2 mA

  • 2.5 V, 5.5 V

  • + 85 C

  • SMD/SMT

  • SO-8

  • Microwire

  • - 40 C

  • Tube

  • 100

  • 5.5 V

  • 2.5 V

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