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MCP1726-ADJE/MF Datasheet

  • MCP1726-ADJE/MF

  • IC, LDO, 1A, ADJ, 8DFN; Primary Input Voltage:6V; Output Vol...

  • 600.20KB

  • 30頁

  • Microchip   Microchip

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MCP1726
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum inter-
nal power dissipation.
5.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power dissi-
pation as a result of ground current is small enough to
be neglected.
EQUATION 5-4:
(
T
J
(
MAX
)
鈥?/div>
T
A
(
MAX
)
)
P
D
(
MAX
)
= ---------------------------------------------------
R胃
JA
P
D(MAX)
= Maximum device power
dissipation
T
J(MAX)
= maximum continuous junction
temperature
T
A(MAX)
= maximum ambient temperature
R胃
JA
= Thermal resistance from junction
to ambient
5.3.1
Package
POWER DISSIPATION EXAMPLE
Package Type = 3X3DFN
Input Voltage
V
IN
= 3.3V 鹵 10%
LDO Output Voltage and Current
V
OUT
= 2.5V
I
OUT
= 1.0A
Maximum Ambient Temperature
T
A(MAX)
= 70擄C
Internal Power Dissipation
P
LDO(MAX)
= (V
IN(MAX)
鈥?V
OUT(MIN)
) x I
OUT(MAX)
P
LDO
= (3.3V x 1.1) 鈥?(0.975 x 2.5V))
x 1.0A
P
LDO
= 1.192 Watts
EQUATION 5-5:
T
J
(
RISE
)
=
P
D
(
MAX
)
脳
R胃
JA
T
J(RISE)
= Rise in device junction
temperature over the ambient
temperature
P
D(MAX)
= Maximum device power
dissipation
R胃
JA
= Thermal resistance from junction
to ambient
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The ther-
mal resistance from junction to ambient (R胃
JA
) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7 鈥淗igh
Effective Thermal Conductivity Test Board for Leaded
Surface-Mount Packages鈥? The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, 鈥淎 Method to Determine
How Much Power a SOT23 Can Dissipate in an Appli-
cation鈥?(DS00792), for more information regarding this
subject.
T
J(RISE)
= P
TOTAL
x R胃
JA
T
JRISE
= 1.192 W x 41.0
擄
C/W
T
JRISE
= 48.8
擄
C
EQUATION 5-6:
T
J
=
T
J
(
RISE
)
+
T
A
T
J
= Junction temperature
T
J(RISE)
= Rise in device junction
temperature over the ambient
temperature
T
A
= Ambient temperature
漏
2005 Microchip Technology Inc.
DS21936B-page 19

MCP1726-ADJE/MF 產(chǎn)品屬性

  • Microchip

  • 低壓降 (LDO) 調(diào)節(jié)器

  • 6 V

  • 0.8 V to 5 V

  • 0.5 V at 1 A

  • 1 A

  • 0.5 %

  • 1

  • Adjustable

  • + 125 C

  • SMD/SMT

  • DFN-8

  • 0.14 mA

  • + 2.3 V

  • 0.05 % / V

  • - 40 C

  • Tube

  • 0.41 V

  • 120

  • 2.5 %

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