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SDD253

Diode-Diode Modules

Symbol

I

R

V

F

V

TO

r

T

Q

S

I

RM

R

thJC

R

thCH

d

S

d

A

a

per diode; DC current

per module

per diode; DC current

per module

T

VJ

=T

VJM

; V

R

=V

RRM

I

F

=750A; T

VJ

=25

o

C

Test Conditions

Characteristic Values

15

1.25

0.90

0.37

-

-

0.14

0.07

0.04

0.02

12.7

9.6

50

Unit

mA

V

V

m

uC

A

o

For power-loss calculations only

T

VJ

=T

VJM

C/W

C/W

o

Creepage distance on surface

Strike distance through air

Maximum allowable acceleration

mm

mm

m/s

2

FEATURES

* International standard package

* Copper base plate with inter-DCB

* Planar passivated chips

* Isolation voltage 3600 V~

APPLICATIONS

* Supplies for DC power equipment

* DC supply for PWM inverter

* Field supply for DC motors

* Battery DC power supplies

ADVANTAGES

* Space and weight savings

* Simple mounting

* Improved temperature and power

cycling

* Reduced protection circuits

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