MSP430x22x2, MSP430x22x4
MIXED SIGNAL MICROCONTROLLER
SLAS504A 鈭?JULY 2006 鈭?REVISED DECEMBER 2006
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
Flash Memory
PARAMETER
VCC(PGM/
ERASE)
fFTG
IPGM
IERASE
tCPT
tCMErase
tRetention
tWord
tBlock, 0
tBlock, 1-63
tBlock, End
tMass Erase
tSeg Erase
Program and Erase supply voltage
Flash Timing Generator frequency
Supply current from VCC during program
Supply current from VCC during erase
Cumulative program time (see Note 1)
Cumulative mass erase time
Program/Erase endurance
Data retention duration
Word or byte program time
Block program time for 1st byte or word
Block program time for each additional byte or word
Block program end-sequence wait time
Mass erase time
Segment erase time
see Note 2
TJ = 25擄C
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
20
104
100
30
25
18
6
10593
4819
tFTG
105
TEST CONDITIONS
VCC
MIN
2.2
257
1
1
TYP
MAX
3.6
476
5
7
10
UNIT
V
kHz
mA
mA
ms
ms
cycles
years
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller鈥檚 state machine (tFTG = 1/fFTG).
RAM
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(RAMh)
RAM retention supply voltage (see Note 1)
CPU halted
1.6
V
NOTE 1: This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
55
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