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MMT08B310T3G Datasheet

  • MMT08B310T3G

  • ON Semiconductor [Thyristor Surge Protectors High Voltage B...

  • 58.28KB

  • ONSEMI

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MMT08B310T3
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range
Blocking or Conducting State
Overload Junction Temperature 鈭?Maximum Conducting State Only
Instantaneous Peak Power Dissipation (I
pk
= 50 A, 10x1000
渭sec
@ 25擄C)
Maximum Lead Temperature for Soldering Purposes 1/8鈥?from Case for 10 Seconds
Symbol
T
J1
T
J2
P
PK
T
L
Max
鈭?0 to + 125
+ 175
2000
260
Unit
擄C
擄C
W
擄C
ELECTRICAL CHARACTERISTICS
(T
J
= 25擄C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
(dv/dt = 100 V/渭s, I
SC
= 1.0 A, Vdc = 1000 V)
(+65擄C)
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 k惟, t = 0.5 cycle) (Note 3)
(+65擄C)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
On鈭扴tate Voltage (I
T
= 1.0 A)
(PW
鈮?/div>
300
渭s,
Duty Cycle
鈮?/div>
2%) (Note 3)
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k惟)
Both polarities
Holding Current (Both polarities)
V
S
= 500 Volts; I
T
(Initiating Current) =
"1.0
Amp
Critical Rate of Rise of Off鈭扴tate Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25擄C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
3. Measured under pulse conditions to reduce heating.
(Note 3)
MMT08B310T3
MMT08B310T3
MMT08B310T3
V
(BO)
MMT08B310T3
MMT08B310T3
dV
(BO)
/dT
J
V
(BR)
I
D1
I
D2
V
T
I
BO
I
H
dv/dt
C
O
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
150
2000
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
0.08
310
鈭?/div>
鈭?/div>
1.53
230
340
鈭?/div>
23
鈭?/div>
365
400
鈭?/div>
鈭?/div>
2.0
5.0
3.0
鈭?/div>
鈭?/div>
鈭?/div>
25
50
%/擄C
V
渭A
V
mA
mA
V/渭s
pF
Symbol
V
(BO)
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
365
400
V
Min
Typ
Max
Unit
V
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
I
D1
, I
D2
V
D1
, V
D2
V
BR
V
BO
I
BO
I
H
V
TM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
+ Voltage
V
D1
V
D2
V
(BR)
I
H
I
D1
I
D2
I
(BO)
V
TM
V
(BO)
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MMT08B310T3G 產(chǎn)品屬性

  • 2,500

  • 過電壓,電流,溫度裝置

  • TVS - 晶閘管

  • -

  • 365V

  • 270V

  • 3V

  • 250A

  • 80A

  • 150mA

  • 1

  • 50pF

  • DO-214AA,SMB

  • 帶卷 (TR)

  • MMT08B310T3GOS

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