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MIC5014 Datasheet

  • MIC5014

  • Micrel Semiconductor [Low-Cost High- or Low-Side MOSFET Dri...

  • MICREL   MICREL

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MIC5014/5015
Micrel
Absolute Maximum Ratings
(Notes 1,2)
Supply Voltage ............................................... 鈥?0V to 60V
Input Voltage .....................................................鈥?0V to V
+
Source Voltage.................................................. 鈥?0V to V
+
Source Current .......................................................... 50mA
Gate Voltage .................................................. 鈥?0V to 50V
Junction Temperature .............................................. 150擄C
Operating Ratings
(Notes 1,2)
JA
(Plastic DIP) ..................................................... 160擄C/W
JA
(SOIC) ............................................................. 170擄C/W
Ambient Temperature: B version ................ 鈥?0擄C to +85擄C
Ambient Temperature: A version .............. +55擄C to +125擄C
Storage Temperature ................................ 鈥?5擄C to +150擄C
Lead Temperature ...................................................... 260擄C
(max soldering time: 10 seconds)
Supply Voltage (V
+
) ......................................... 2.75V to 30V
Electrical Characteristics
(Note 3) T
A
= 鈥?5擄C to +125擄C
Parameter
Supply Current
V = 30V
V
+
= 5V
V
+
= 3V
Logic Input Voltage Threshold
V
IN
Logic Input Current
MIC5014 (non-inverting)
Logic Input Current
MIC5015 (inverting)
Input Capacitance
Gate Enhancement
V
GATE
鈥?V
SUPPLY
Zener Clamp
V
GATE
鈥?V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
3.0V
鈮?/div>
V
+
鈮?/div>
30V
T
A
= 25擄C
3.0V
鈮?/div>
V
+
鈮?/div>
30V
3.0V
鈮?/div>
V
+
鈮?/div>
30V
3.0V
鈮?/div>
V
+
鈮?/div>
30V
8.0V
鈮?/div>
V
+
鈮?/div>
30V
V
+
= 4.5V
C
L
= 1000pF
V
+
= 12V
C
L
= 1000pF
V
+
= 4.5V
C
L
= 1000pF
V
+
= 12V
C
L
= 1000pF
+
unless otherwise specified
Conditions
Min
Typ
V
IN
De-Asserted (Note 5)
10
V
IN
Asserted (Note 5)
5.0
V
IN
De-Asserted
10
V
IN
Asserted
60
V
IN
De-Asserted
10
V
IN
Asserted
25
Digital Low Level
Digital High Level
2.0
V
IN
Low
鈥?.0
0
V
IN
High
1.0
V
IN
Low
鈥?.0
鈥?.0
V
IN
High
鈥?.0
5.0
V
IN
Asserted
4.0
V
IN
Asserted
13
15
2.5
90
6.0
6.0
35
37
Max
25
10
25
100
25
35
0.8
Units
碌A(chǔ)
mA
碌A(chǔ)
碌A(chǔ)
V
碌A(chǔ)
碌A(chǔ)
pF
V
V
ms
碌s
碌s
碌s
V
2.0
2.0
17
17
8.0
140
30
30
41
5
Gate Turn-off Time, t
OFF
(Note 4)
V
IN
switched on, measure
time for V
GATE
to reach V
+
+ 4V
As above, measure time for
V
GATE
to reach V
+
+ 4V
V
IN
switched off, measure
time for V
GATE
to reach 1V
As above, measure time for
V
GATE
to reach 1V
Overvoltage Shutdown
Threshold
Note 1: Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply
when operating the device beyond its specified
Operating Ratings.
Note 2:
The MIC5014/5015 is ESD sensitive.
Note 3:
Minimum and maximum
Electrical Characteristics
are 100% tested at T
A
= 25擄C and T
A
= 85擄C, and 100% guaranteed over the
entire operating temperature range. Typicals are characterized at 25擄C and represent the most likely parametric norm.
Note 4:
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster鈥攕ee
Applications Information. Maximum value of switching time seen at 125擄C, unit operated at room temperature will reflect the typical value
shown.
Note 5:
鈥淎sserted鈥?refers to a logic high on the MIC5014 and a logic low on the MIC5015.
1997
5-139

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