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CED63A3 Datasheet

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CED63A3/CEU63A3
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
c
b
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= 30A
V
DS
= 15V, I
D
= 45A,
V
GS
= 10V
Test Condition
V
GS
= 0V, I
D
= 250碌A(chǔ)
V
DS
= 30V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250碌A(chǔ)
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 24A
V
DS
= 10V, I
D
= 30A
1
8.5
11
22
2115
405
255
17
17.8
157
78
33.2
5.5
8.3
30
1.2
35
35.6
226
156
45.4
Min
30
1
100
-100
3
11
14
Typ
Max
Units
V
碌A(chǔ)
nA
nA
V
m鈩?/div>
m鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
6
Gate Threshold Voltage
V
DS
= 15V, V
GS
= 0V,
f = 1.0 MHz
V
DD
= 15V, I
D
= 45A,
V
GS
= 10V, R
GEN
= 24鈩?/div>
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300碌s, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2

CED63A3 PDF文件相關(guān)型號(hào)

CEU63A3

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    30V N Channel MOS
    ETC
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