NXP Semiconductors
BZX84J series
Single Zener diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
t
p
= 100
碌s;
square wave; T
j
= 25
擄C
prior to surge
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
2
.
[1]
Conditions
Min
-
-
Max
250
see
Table 8
and
9
40
550
150
+150
+150
Unit
mA
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[1]
-
-
-
鈭?5
鈭?5
W
mW
擄C
擄C
擄C
T
amb
鈮?/div>
25
擄C
[2]
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
230
55
Unit
K/W
K/W
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
擄
C unless otherwise speci鏗乪d.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.
Conditions
[1]
Min
-
-
Typ
-
-
Max
0.9
1.1
Unit
V
V
BZX84J_SER_1
漏 NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 鈥?1 March 2007
3 of 12
                         
                        
                        prev
                        
                        next