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AD8061ARTZ-R2 Datasheet

  • AD8061ARTZ-R2

  • Analog Devices [Low Cost, 300 MHz Rail-to-Rail Amplifiers]

  • 530.27KB

  • AD

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AD8061/AD8062/AD8063
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Internal Power Dissipation
1
8-lead SOIC (R)
5-lead SOT-23 (RT)
6-lead SOT-23 (RT)
8-lead MSOP (RM)
Input Voltage (Common-Mode)
(鈭扸
S
鈭?0.2 V) to (+V
S
鈭?1.8 V)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
R-8, RM-8, SOT-23-5, SOT-23-6
Operating Temperature Range
Lead Temperature Range
(Soldering 10 sec)
1
Rating
8V
0.8 W
0.5 W
0.5 W
0.6 W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
MAXIMUM POWER DISSIPATION
鹵V
S
Observe Power Derating Curves
鈭?5擄C to +125擄C
鈭?0擄C to +85擄C
300擄C
Specification is for device in free air.
8-Lead SOIC: 胃
JA
= 160擄C/W; 胃
JC
= 56擄C/W.
5-Lead SOT-23: 胃
JA
= 240擄C/W; 胃
JC
= 92擄C/W.
6-Lead SOT-23: 胃
JA
= 230擄C/W; 胃
JC
= 92擄C/W.
8-Lead MSOP: 胃
JA
= 200擄C/W; 胃
JC
= 44擄C/W.
The maximum power that can be safely dissipated by the
AD806x is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150擄C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc-
tion temperature of 175擄C for an extended period can result in
device failure. While the AD806x is internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150擄C) is not exceeded
under all conditions.
To ensure proper operation, it is necessary to observe the
maximum power derating curves.
2.0
8-LEAD SOIC
PACKAGE
1.5
T
J
= 150
C
MAXIMUM POWER DISSIPATION (W)
1.0
0.5
MSOP
01065-006
SOT-23-5, -6
0
鈥?0 鈥?0 鈥?0 鈥?0 鈥?0
0
10
20
30
40
50
60
70
80
90
AMBIENT TEMPERATURE (
C)
Figure 6. Maximum Power Dissipation vs. Temperature for
AD8061/AD8062/AD8063
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. D | Page 6 of 20

AD8061ARTZ-R2 產(chǎn)品屬性

  • 5 V

  • 90 dB

  • 650V/μs

  • 8.5nV/√Hz

  • 表面貼裝

  • 1.6mm

  • SOT-23

  • 2.9 x 1.6 x 1.15mm

  • 5

  • 電壓反饋

  • -40 °C

  • +85 °C

  • 1

  • 軌至軌

  • 2.9mm

  • 1.15mm

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