Dynamic Ratings
Description
Forward
Transconductance g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance Crss
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
Total Gate Charge
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Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
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third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Symbol
Conditions
I
D
=10.5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
min.
typ.
max.
Unit
11
-
-
22
2280
320
16
-
3420
480
24
S
Ciss
Coss
pF
-
V
cc
=300V
V
GS
=10V
I
D
=10.5A
R
GS
=10鈩?/div>
V
cc
=300V
I
D
=21A
V
GS
=10V
-
-
-
-
-
-
-
27
37
75
11
54
16
20
41
56
113
17
81
24
30
nC
ns
tf
Q
G
Q
GS
Q
GD
Gate-Source Charge
Gate-Drain Charge
Reverse Diode
Description
Avalanche Capability
I
AV
Diode Forward
On-Voltage V
SD
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
Symbol
Conditions
L=1.67mH Tch=25擄C
See Fig.1 and Fig.2
I
F
=21A
V
GS
=0V
I
F
=21A
V
GS
=0V
-di/dt=100A/碌 s
T
ch
=25擄C
-
10.00
-
碌
C
-
0.7
-
碌s
T
ch
=25擄C
-
0.98
1.50
V
21
-
-
A
min.
typ.
max.
Unit
7.Thermal Resistance
Description
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-a)
Symbol
min.
typ.
max.
1.042
40.0
Unit
擄C/W
擄C/W
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
4 / 19
H04-004-03
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