1.Scope
2.Construction
3.Applications
4.Outview
This specifies Fuji Power MOSFET 2SK3523-01R
N-Channel enhancement mode power MOSFET
for Switching
TO-3PF
Outview See to 8/19 page
5.Absolute Maximum Ratings at Tc=25擄 C (unless otherwise specified)
擄
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche Current
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Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
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the express written consent of Fuji Electric Co.,Ltd.
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AS
E
AS
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
V
ISO
Characteristics
500
500
鹵 21
鹵 84
鹵 30
21
400
20
5
3.125
120
150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
kV/碌s
kV/碌s
W
擄C
擄C
kVrms
Remarks
VGS=-30V
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
L=1.67mH,Vcc=50V
VDS<=500V
*1
Ta=25擄C
Tc=25擄C
t=60sec
f=60Hz
*1 I
F
鈮?I
D
,-di/dt=50A/碌s,Vcc鈮V
DSS
,Tch鈮?50擄C
6.Electrical Characteristics at Tc=25擄 C (unless otherwise specified)
擄
Static Ratings
Description
Drain-Source
Breakdown Voltage BV
DSS
Gate Threshold
Voltage V
GS
(th)
Zero Gate Voltage
Drain Current I
DSS
Gate-Source
Leakage Current I
GSS
Drain-Source
On-State Resistance R
DS
(on)
Symbol
Conditions
I
D
=250碌A
V
GS
=0V
I
D
=250碌A
V
DS
=V
GS
V
DS
=500V
T
ch
=25擄C
V
GS
=0V
V
DS
=400V
T
ch
=125擄C
V
GS
=0V
V
GS
= 鹵 30V
V
DS
=0V
I
D
=10.5A
V
GS
=10V
DWG.NO.
min.
typ.
max.
Unit
500
3.0
-
-
-
-
-
-
-
5.0
25
V
V
碌
A
250
-
10
100
nA
-
0.20
0.26
鈩?/div>
Fuji Electric Co.,Ltd.
MS5F5173
3 / 19
H04-004-03
                         
                        
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