Max. peak on-state voltage
max.
max.
max.
max.
m鈩?/div>
0.58
600
1000
mA
t
2
I
H
I
L
T
J
= 25擄C, I
T
> 30A
T
J
= 25擄C, V
A
= 12V, Ra = 6鈩? I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST183S
1000
1.1
Min
10
Max
20
Units
A/碌s
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25擄C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t = 1碌s
p
Typical delay time
碌s
Resistive load, Gate pulse: 10V, 5鈩?source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/碌s
V
R
= 50V, t = 500碌s, dv/dt: see table in device code
p
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST183S
500
40
Units
V/碌s
mA
Conditions
T
J
= T
J
max., linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST183S
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
鈮?/div>
5ms
p
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
鈮?/div>
5ms
p
T
J
= T
J
max, V
A
= 12V, Ra = 6鈩?/div>
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
D-463
To Order
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