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dsPIC33FJ32GP204 Datasheet

  • dsPIC33FJ32GP204

  • High-Performance,16-bit Digital Signal Controllers

  • 2082.75KB

  • 270頁

  • Microchip   Microchip

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dsPIC33FJ32GP202/204 and dsPIC33FJ16GP304
4.4.1
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
4.
5.
Write the first 64 instructions from data RAM into
the program memory buffers (see Example 4-2).
Write the program block to Flash memory:
a) Set the NVMOP bits to 鈥?001鈥?to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
b) Write 55h to NVMKEY.
c) Write AAh to NVMKEY.
d) Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash mem-
ory is done, the WR bit is cleared
automatically.
Repeat steps 4 and 5, using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG, until all
512 instructions are written back to Flash memory.
Programmers can program one row of program Flash
memory at a time. To do this, it is necessary to erase
the 8-row erase page that contains the desired row.
The general process is:
1.
2.
3.
Read eight rows of program memory
(512 instructions) and store in data RAM.
Update the program data in RAM with the
desired new data.
Erase the block (see Example 4-1):
a) Set the NVMOP bits (NVMCON<3:0>) to
鈥?010鈥?to configure for block erase. Set the
ERASE (NVMCON<6>) and WREN (NVM-
CON<14>) bits.
b) Write the starting address of the page to be
erased into the TBLPAG and W registers.
c) Write 55h to NVMKEY.
d) Write AAh to NVMKEY.
e) Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the dura-
tion of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
6.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
application must wait for the programming time until
programming is complete. The two instructions
following the start of the programming sequence
should be
NOPs,
as shown in Example 4-3.
EXAMPLE 4-1:
ERASING A PROGRAM MEMORY PAGE
;
; Initialize NVMCON
;
;
;
;
;
;
;
;
;
;
;
;
; Set up NVMCON for block erase operation
MOV
#0x4042, W0
MOV
W0, NVMCON
; Init pointer to row to be ERASED
MOV
#tblpage(PROG_ADDR), W0
MOV
W0, TBLPAG
MOV
#tbloffset(PROG_ADDR), W0
TBLWTL W0, [W0]
DISI
#5
MOV
MOV
MOV
MOV
BSET
NOP
NOP
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
Initialize PM Page Boundary SFR
Initialize in-page EA[15:0] pointer
Set base address of erase block
Block all interrupts with priority <7
for next 5 instructions
Write the 55 key
Write the AA key
Start the erase sequence
Insert two NOPs after the erase
command is asserted
漏
2007 Microchip Technology Inc.
Preliminary
DS70290A-page 53

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