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THS4511 Datasheet

  • THS4511

  • 寬帶、低噪聲、低失真、全差動放大器

  • 38頁

  • TI

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THS4511
www.ti.com
SLOS471 鈥?SEPTEMBER 2005
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
UNIT
V
SS
V
I
V
ID
I
O
T
J
T
J
T
A
T
stg
Supply voltage
Input voltage
Differential input voltage
Output current
Continuous power dissipation
Maximum junction temperature
(2)
Maximum junction temperature, continuous operation, long term reliability
(3)
Operating free-air temperature range
Storage temperature range
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
HBM
ESD ratings
CDM
MM
(1)
(2)
(3)
V
S鈥?/div>
to V
S+
5.5 V
鹵V
S
4V
200 mA
See Dissipation Rating Table
150擄C
125擄C
鈥?0擄C to 85擄C
鈥?5擄C to 150擄C
300擄C
2000 V
1500 V
100 V
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device. The THS4511 incorporates a (QFN) exposed thermal pad on the underside
of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so
may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief
SLMA002
and
SLMA004
for more information about utilizing the QFN thermally enhanced package.
DISSIPATION RATINGS TABLE PER PACKAGE
PACKAGE
(1)
RGT (16)
(1)
胃
JC
2.4擄C/W
胃
JA
39.5擄C/W
POWER RATING
T
A
鈮?/div>
25擄C
2.3 W
T
A
= 85擄C
225 mW
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at
www.ti.com.
2

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