2SK3050
Transistors
FORWARD TRANSFER ADMITTANCE : |Y
fS
|
(S)
REVERSE DRAIN CURRENT : I
DR
(A)
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(鈩?
V
GS
=
10V
Pulsed
2
V
DS
=10V
Pulsed
Ta=鈭?5擄C
25擄C
75擄C
125擄C
5
2
1
0.5
0.2
0.1
0.05
0.02
0
V
GS
=0V
Pulsed
1
0.5
10
Ta=125擄C
75擄C
25擄C
鈭?5擄C
I
D
=2A
0.2
5
1A
0.1
0.05
0
鈭?0 鈭?5
0
25
50
75
100 125 150
0.02
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
CHANNEL TEMPERATURE : Tch
(擄C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
Fig.8 Forward transfer admittance
vs. drain current
Fig.9 Reverse drain current
vs. source-drain voltage (
螜
)
5
REVERSE DRAIN CURRENT : I
DR
(A)
Ta=25擄C
Pulsed
0V
CAPACITANCE : C
(pF)
1000
500
5000
2000
SWITCHING TIME : t
(ns)
2
1
0.5
V
GS
=10V
C
iss
200
100
50
20
10
5
V
GS
=0V
1000
500
200
100
50
20
10
Ta=25擄C
V
DD
=300V
V
GS
=10V
R
G
=10鈩?/div>
Pulsed
C
oss
t
f
t
d(off)
t
r
0.5
1
0.2
0.1
0.05
0
C
rss
Ta=25擄C
t
d(on)
2
5
10
20
f=1MHz
2
Pulsed
0.5
1.0
1.5
0.5
1
2
5
10
20
50 100 200
500 1000
0.05 0.1 0.2
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
Fig.10 Reverse drain current
vs. source-drain voltage (
螜螜
)
Fig.11 Typical capacitance
vs. drain-source voltage
Fig.12 Switching characteristics
500
DRAIN-SOURCE VOLTAGE : V
DS
(V)
14
V
DS
V
DD
=400V
V
GS
400
12
10
300
350V
100V
REVERSE RECOVERY TIME : trr
(ns)
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25擄C
I
D
=2A
Pulsed
5000
Ta=25擄C
di/dt=100A/碌s
V
GS
=0V
2000
Pulsed
1000
500
V
DD
=100V
8
350V
200
6
4
400V
200
100
50
0.05 0.1 0.2
100
2
0
0
0
16
2
3
4
5
10
12
14
0.5
1
2
5
10
TOTAL GATE CHARGE : Qg
(nC)
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.13 Dynamic input characteristics
Fig.14 Reverse recovery time
vs. reverse drain current
3/4
1
2
3
4
5
