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2SK3050 Datasheet

  • 2SK3050

  • Small switching (600V, 2A)

  • 5頁(yè)

  • ROHM

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2SK3050
Transistors
Electrical characteristics
(Ta=25擄C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
Min.
鈭?/div>
600
鈭?/div>
2.0
鈭?/div>
0.5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
4.4
1.0
280
48
16
12
17
29
105
460
2.0
Max.
鹵100
鈭?/div>
100
4.0
5.5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Unit
nA
V
碌A(chǔ)
V
鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
ns
碌C
Test Conditions
V
GS
=鹵30V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=600V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=1A,
V
GS
=10V
I
D
=1A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=1A,
V
DD
300V
V
GS
=10V
R
L
=300鈩?/div>
R
G
=10鈩?/div>
I
DR
=2A,
V
GS
=0V
di/dt=100A/碌s
Electrical characteristic curves
10
5
ar
ea
)
2.0
5
Ta=25擄C
Pulsed
s
0
碌
s
10
s
1m
m
on
00
ati
=
1
per
P
W
O
C
D
10
m
V
GS
=10V
2
V
DS
=
10V
Pulsed
DRAIN CURRENT : I
D
(A)
2
1
0.5
0.2
0.1
0.05
DRAIN CURRENT : I
D
(A)
1.6
6V
DRAIN CURRENT : I
D
(A)
is on
th S(
in RD
n
tio by
ra d
pe mite
O li
is
s
1
0.5
Ta=
鈭?5擄C
25擄C
75擄C
125擄C
1.2
5.5V
0.8
5V
0.2
0.1
0.05
0.02
0
0.4
4.5V
0.02
Tc=25擄C
Single pulse
0.01
1 2
5 10 20
50 100 200 500 1000
0
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Maximum safe operating area
Fig.2 Typical output characteristics
Fig.3 Typical transfer characteristics
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
6
5
4
3
2
1
0
鈭?0
鈭?5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(鈩?
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(鈩?
V
DS
=
10V
l
D
=1mA
100
V
GS
=
10V
Pulsed
Ta=125擄C
75擄C
9
8
7
6
I
D
=2A
Ta=25擄C
Pulsed
20
25擄C
鈭?5擄C
10
5
5
4
3
0
1A
2
0
25
50
75
100 125
150
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
5
10
15
20
25
30
CHANNEL TEMPERATURE : Tch
(擄C)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Gate threshold voltage
vs. channel temperature
Fig.5 Static drain-source on-state
resistance vs. drain current
Fig.6 Static drain-source on-state
resistance vs. gate-source voltage
2/4

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