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ST72321AR6 Datasheet

  • ST72321AR6

  • 8-BIT MCU WITH NESTED INTERRUPTS, FLASH,10-BIT ADC, FIVE TIM...

  • STMicroelectronics   STMicroelectronics

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ST72321
4 FLASH PROGRAM MEMORY
4.1 Introduction
The ST7 dual voltage High Density Flash
(HDFlash) is a non-volatile memory that can be
electrically erased as a single block or by individu-
al sectors and programmed on a Byte-by-Byte ba-
sis using an external V
PP
supply.
The HDFlash devices can be programmed and
erased off-board (plugged in a programming tool)
or on-board using ICP (In-Circuit Programming) or
IAP (In-Application Programming).
The array matrix organisation allows each sector
to be erased and reprogrammed without affecting
other sectors.
4.2 Main Features
s
Depending on the overall Flash memory size in the
microcontroller device, there are up to three user
sectors (see
Table 3).
Each of these sectors can
be erased independently to avoid unnecessary
erasing of the whole Flash memory when only a
partial erasing is required.
The first two sectors have a fixed size of 4 Kbytes
(see
Figure 5).
They are mapped in the upper part
of the ST7 addressing space so the reset and in-
terrupt vectors are located in Sector 0 (F000h-
FFFFh).
Table 3. Sectors available in Flash devices
Flash Size (bytes)
4K
8K
> 8K
Available Sectors
Sector 0
Sectors 0,1
Sectors 0,1, 2
s
s
s
Three Flash programming modes:
鈥?Insertion in a programming tool. In this mode,
all sectors including option bytes can be pro-
grammed or erased.
鈥?ICP (In-Circuit Programming). In this mode, all
sectors including option bytes can be pro-
grammed or erased without removing the de-
vice from the application board.
鈥?IAP (In-Application Programming) In this
mode, all sectors except Sector 0, can be pro-
grammed or erased without removing the de-
vice from the application board and while the
application is running.
ICT (In-Circuit Testing) for downloading and
executing user application test patterns in RAM
Read-out protection against piracy
Register Access Security System (RASS) to
prevent accidental programming or erasing
4.3 Structure
The Flash memory is organised in sectors and can
be used for both code and data storage.
Figure 5. Memory Map and Sector Address
4K
1000h
3FFFh
7FFFh
9FFFh
BFFFh
D7FFh
DFFFh
EFFFh
FFFFh
4.3.1 Read-out Protection
Read-out protection, when selected, makes it im-
possible to extract the memory content from the
microcontroller, thus preventing piracy. Even ST
cannot access the user code.
In flash devices, this protection is removed by re-
programming the option. In this case, the entire
program memory is first automatically erased and
the device can be reprogrammed.
Read-out protection selection depends on the de-
vice type:
鈥?In Flash devices it is enabled and removed
through the FMP_R bit in the option byte.
鈥?In ROM devices it is enabled by mask option
specified in the Option List.
Note:
The LVD is not supported if read-out protec-
tion is enabled
8K
10K
16K
24K
32K
48K
60K
FLASH
MEMORY SIZE
SECTOR 2
2 Kbytes
8 Kbytes
16 Kbytes 24 Kbytes 40 Kbytes 52 Kbytes
4 Kbytes
4 Kbytes
SECTOR 1
SECTOR 0
17/185

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