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SST39WF400A Datasheet

  • SST39WF400A

  • 4 Mbit (x16) Multi-Purpose Flash

  • SST   SST

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4 Mbit Multi-Purpose Flash
SST39WF400A
Data Sheet
TABLE 8: DC O
PERATING
C
HARACTERISTICS
V
DD
= 1.65-1.95V
1
Limits
Symbol
I
DD
Parameter
Power Supply Current
Read
Program and Erase
I
SB
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
DD
-0.1
0.8V
DD
0.1
15
20
5
2
1
1
0.2V
DD
V
V
V
mA
mA
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Min
Max
Units
Test Conditions
Address input=V
ILT
/V
IHT,
at f=5 MHz,
V
DD
=V
DD
Max
CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
DD
, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=100 碌A(chǔ), V
DD
=V
DD
Min
I
OH
=-100 碌A(chǔ), V
DD
=V
DD
Min
T8.2 1220
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25擄C
(room temperature), and V
DD
= 1.8V. Not 100% tested.
2. 5 碌A(chǔ) is the maximum I
SB
for all 39WF400A commercial grade devices. 20 碌A(chǔ) is the maximum I
SB
for all 39WF400A industrial grade
devices. For all 39WF400A commercial and industrial devices, I
SB
typical is 1 碌A(chǔ).
TABLE 9: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
碌s
碌s
T9.0 1220
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: C
APACITANCE (Ta = 25擄C, f=1 MHz, other pins open)
Parameter
C
I/O
C
IN
1
1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T10.0 1220
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END
T
DR1
I
LTH1
1,2
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T11.0 1220
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
漏2004 Silicon Storage Technology, Inc.
S71220-05-000
6/04
10

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