Philips Semiconductors
Product speci鏗乧ation
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
擄C
unless otherwise speci鏗乪d.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
鈭?0
V
I
C
= 0; V
EB
=
鈭?
V
V
CE
=
鈭?
V; (see Fig.2)
I
C
=
鈭?.1
mA
I
C
=
鈭?
mA
I
C
=
鈭?0
mA
I
C
=
鈭?0
mA
I
C
=
鈭?00
mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation I
C
=
鈭?0
mA; I
B
=
鈭?
mA
voltage
I
C
=
鈭?0
mA; I
B
=
鈭?
mA
base-emitter saturation
voltage
collector capacitance
emitter capacitance
transition frequency
noise 鏗乬ure
I
C
=
鈭?0
mA; I
B
=
鈭?
mA
I
C
=
鈭?0
mA; I
B
=
鈭?
mA
I
E
= i
e
= 0; V
CB
=
鈭?
V; f = 1 MHz
I
C
=
鈭?0
mA; V
CE
=
鈭?0
V;
f = 100 MHz
60
80
100
60
30
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
250
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
MMBT3906
UNIT
K/W
MAX.
鈭?0
鈭?0
UNIT
nA
nA
300
鈭?/div>
鈭?/div>
鈭?00
鈭?00
鈭?50
鈭?50
4.5
10
鈭?/div>
4
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
= i
c
= 0; V
EB
=
鈭?00
mV; f = 1 MHz
鈭?/div>
I
C
=
鈭?00 碌A(chǔ);
V
CE
=
鈭?
V; R
S
= 1 k鈩?
鈭?/div>
f = 10 Hz to 15.7 kHz
I
Con
=
鈭?0
mA; I
Bon
=
鈭?
mA;
I
Boff
= 1 mA
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
2000 Apr 11
3
MMBT3906 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
200mA
40V
400mV @ 5mA，50mA
-
100 @ 10mA，1V
350mW
250MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23
帶卷 (TR)
MMBT3906FSTR
MMBT3906相關(guān)型號PDF文件下載
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