Philips Semiconductors
Product speci鏗乧ation
PNP resistor-equipped transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
擄C
unless otherwise speci鏗乪d.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0; V
CB
=
鈭?0
V; f = 1 MHz
CONDITIONS
I
E
= 0; V
CB
=
鈭?0
V
I
B
= 0; V
CE
=
鈭?0
V
I
B
= 0; V
CE
=
鈭?0
V; T
j
= 150
擄C
I
C
= 0; V
EB
=
鈭?
V
I
C
=
鈭?
mA; V
CE
=
鈭?
V
I
C
=
鈭?00 碌A(chǔ);
V
CE
=
鈭?
V
I
C
=
鈭?0
mA; V
CE
=
鈭?.3
V
MIN.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
30
鈭?/div>
鈭?/div>
鈭?.5
7
0.8
鈭?/div>
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE.
250
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
鈮?/div>
25
擄C;
note 1
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?5
鈭?/div>
鈭?5
CONDITIONS
open emitter
open base
open collector
鈭?/div>
鈭?/div>
鈭?/div>
MIN.
PDTA114ES
MAX.
鈭?0
鈭?0
鈭?0
+10
鈭?0
鈭?00
鈭?00
500
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mW
擄C
擄C
擄C
UNIT
K/W
TYP.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?.1
鈭?.8
10
1
鈭?/div>
MAX.
鈭?00
鈭?
鈭?0
鈭?00
鈭?/div>
鈭?50
鈭?.8
鈭?/div>
13
1.2
3
UNIT
nA
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mV
V
V
k鈩?/div>
collector-emitter saturation voltage I
C
=
鈭?0
mA; I
B
=
鈭?.5
mA
pF
1998 May 18
3
PDTA114ES相關(guān)型號(hào)PDF文件下載
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